Band edge luminescence. For the Pb-variant, grains of red-shifted and lower intensity band edge emis-sion simultaneously exhibit a more pronounced luminescence from a broad defect-related band around 2 eV. Sep 1, 2018 · We report on the passivation of surface defects of ZnO nanorods by surface layer deposition. Oct 2, 2006 · The authors observed a drastic change in exciton-related luminescence in deformed hexagonal boron nitride single crystals. When the uniaxial tensile strain exceeds 0. The near band edge (NBE) emission from ZnO excited by a 325 nm He-Cd laser was Sep 1, 2018 · The band edge emission is significantly increased as compared to blue-green emission after ZnS surface layer deposition on ZnO nanorods. 8,38 In GaN, at low temperatures, excitons are formed much faster than free electrons and holes recombine. The band-edge luminescence absolute intensity dramatically decreases as the carbon concentration increases. By varying the reaction time Oct 1, 2022 · Near band edge luminescence of perovskite single crystals reveals dual emission band [[1], [2], [3]]. The strong band edge luminescence shows that the sub-microwires contain few, if any, dislocations or stacking faults, as these defects tend to quench band edge radiative recombination. Therefore, the present findings deepen our understanding on how halogen doping boosts the luminescence performance of CuI-based materials. Oct 1, 2016 · This review gives the reader an overview of the published results describing near band-edge as well as defect related luminescence in aluminum nitride, also presenting findings from theoretical reports investigating band-structure, intrinsic defects or foreign impurities. In recent years, γ-CuI has May 24, 1999 · GaN grown on c -plane sapphire substrates has been reactive ion etched successfully in a SF 6 plasma with an etch rate of 29 nm/min. The asymmetry of microcrystals leads to a splitting of the fourfold-degenerate ground hole state into two twofold-degenerate ones. Panel a of Fig. 3 Band-Edge and Surface Luminescence Jun 21, 2002 · The defect band luminescence exhibits a rapid rise time; the related formation rate is largely temperature independent and greater than the exciton decay rate. ZnO nanorods and ZnSZnO hybrid nanostructures are grown o… The absence of luminescence in the near band edge energy region of Te-anion based semiconductor nanowires grown by gold catalyst assisted molecular beam epitaxy has strongly limited their applications in the field of photonics. Apr 15, 1993 · The effect of nonspherical shape on the optical properties of semiconductor microcrystals with a degenerate valence band has been theoretically studied. f both CsPbX 178 feature above the band edge that roughly aligns with the emission peak position. The Journal of Chemical Physics, 106 (23), 9869–9882. As a result, only excitonic emission is observed close to Eg in the form of multiple narrow Dec 29, 2015 · 176 reported. A comparison of bulk and surface exciton lifetimes yields a room temperature surface recombination velocity of 2 × 10 3 cm s −1 and an intrinsic lifetime of 185 ns. [28, 29] 2. The observed dependences are explained by formation of the density tails of states as a result of We observed strong band edge luminescence at 8. Another important difference is that while the low-carbon concentration reference sample ([C] = 5×1016 cm-3) exhibits strong shallow donor-acceptor pair (DAP) luminescence (~3. In this work, we measured the band-edge photoluminescence (PL) intensities of a number of single-crystal wafers. We then measured the PL spectra and recombination lifetimes of these wafer sets under a variety of conditions. 1063/1. Do band tail or Urbach-like states exist in single-crystalline materials? Previously we found in bulk CsPbBr 3 single crystals that a band edge luminescence at ~2. AI generated Apr 1, 2011 · Intense band-edge photoluminescence is observed from ZnO nanocrystals with an average diameter of about 3 nm. Its band-edge emission is no longer prohibited and changes to E c. Band-Edge Luminescence from Oxide and Halide Perovskite Semiconductors Yoshihiko Kanemitsu*[a] and Yasuhiro Yamada[b] Abstract: Because perovskite crystals exhibit unique magnetic, conductive, and optical properties, they have been the subject of many fundamental investigations in various research fields. Jan 17, 2023 · Circularly polarized luminescence (CPL) is one of the critical chiroptical properties for chiral nanomaterials, which exhibit wide potential applications in many research fields. Mar 15, 2025 · In contrast, the PL signal corresponding to band-to-band or near-band edge (NBE) recombination is rare due to the indirect nature of the band gap. The present study reports strong near-band edge photoluminescence of anodic TiO 2 film. Recently a number of “dark exciton” theories have been proposed which explain the luminescence in terms of recombination through internal core We study the band edge luminescence of CdSe nanocrystallites to determine the origin of this emission. [14 ]The band -edge PL compri ses two peaks, a relatively large peak at the low -energy side and a small peak at the high -energy side. At the same time, in order to improve your experience, we store and access the information (cookies or corresponding information) on your terminal on the condition that you agree to all our websites and applications Mar 1, 2001 · Enhancement of band-edge luminescence and photo-stability in colloidal CdSe quantum dots by various surface passivation technologies We study the band edge luminescence of CdSe nanocrystallites to determine the origin of this emission. However, the 179 origin of this absorption feature is currently unknown. 5 K) micro-PL mapping, we simultaneously observed enhancement of the defect-bound exciton emission and quenching of the band edge exciton emission when the WSe 2 was on a plasmonic structure. 95%, the top valence band is the B exciton state. Previous studies have attributed the band edge emission to the recombination of photo-generated carriers trapped in localized surface states. A. Jul 7, 2025 · This study investigated the luminescence transformation behavior of AgInS 2 QDs from broad defect to sharp band-edge emission during postsynthesis treatment via the addition of trioctylphosphine (TOP). The discovery of the mechanism responsible for this luminescence We study the luminescence of surface modified CdSe nanocrystallites. The photoluminescence spectra at 80 K are found to depend strongly on the annealing treatment performed (rapid thermal versus furnace annealing). 7, where both the broad band and band-edge Liquid-like Free Carrier Solvation and Band Edge Luminescence in Lead-Halide Perovskites Yinsheng Guo,1 Omer Yaffe,2 Trevor D. Oct 1, 2019 · MBE grown germanium tunnel- junctionsﾂ傭urstein-moss effect and band-edge luminescence in the Ge Zener-Emitter In this paper we present a realistic multiband calculation of the band-edge exciton fine structure in quantum dots of semiconductors having a degenerate valence band, which takes into account the effect of the electron-hole exchange interaction, nonsphericity of the crystal shape, and the intrin- sic hexagonal lattice asymmetry. Therefore, it is expected that this class of high-quality materials will be advantageous for optoelectronic devices such as solar cells and light-emitting diodes. 134 μm) can be related to the recombination lifetime. Time-resolved measurements at 20 K reveal that the band-edge luminescence is composed of two components and the enhancement occurs in the low-energy one, while the intensity for the high-energy Oct 10, 2021 · The less sharp absorption edge of polycrystalline CH 3 NH 3 PbBr 3 is probably caused by strengthened electron–phonon coupling due to lattice imperfections. Oct 22, 2019 · We presented the experimental and theoretical investigations of the surface plasmon-exciton coupled photoluminescence characteristics of Ga-doped Zinc Oxide (GZO) in Ag/GZO and Au/GZO nanostructures. 2 eV is the dominant defect-related luminescence in unintentionally doped GaN. The quenching of blue-green emission is explained in terms of reduced surface defects after ZnS deposition. 27 eV and phonon replicas), this emission is surprisingly Feb 15, 2025 · Recently, the study based on the charge transfer band (CTB) edge red-shift phenomenon with the increase of temperature shows that the increase of temperature can improve the excitation efficiency of host, and further promote the luminescence of activator ions through energy transfer [[24], [25], [26], [27]]. 5–200 K from 200–880 nm thick InN films grown on 10 nm thick InN buffer layers on Si (001) and Si (111) substrates by electron cyclotron resonance-assisted molecular beam epitaxy. Hull,1 Jonathan S. Aug 7, 2018 · In the present study, we developed a reproducible method for obtaining spectrally narrow band-edge PL from AgInS 2 NPs in the visible region. The band-edge emission was achieved by We report the solution-phase synthesis of nonstoichiometric Ag–In–S and Ag–In–Ga–S nanoparticles and results of the investigation of their photoluminescence (PL) properties in relation to their chemical compositions. ABSTRACTThis paper quickly reviews the structure of band-edge luminescence in Si/strained Si1−xGex heterostructures, and then focusses on two recent developments -- the origin of “deep” sub-bandgap luminescence which is sometimes observed in structures grown by Molecular Beam Epitaxy (MBE) and the understanding of the temperature dependence of the band-edge luminescence (up to room Band-to-band radiative recombination is defined as the process where an excited electron transitions from the conduction band to the valence band, recombining with a hole and releasing energy in the form of photons. X-ray diffraction, transmission electron microscope and UV–vis spectrophotometer measurements confirmed the growth of Ag NPs in the ZnO matrix. Excitonic emission An exciton is a bound state of an electron and a hole attracted to each other by Coulomb force. High quality single crystals that showed a free exciton luminescence band at 215 nm were used as a starting material. The The wavelength of the band-edge luminescence is 375-400 nm. In equilibrium, excitons B and C have energies 92 and 14 meV lower than exciton A, respectively. Band edge luminescence was observed independent of the oxidation temperature. 473875 For the Pb-variant, grains of red-shifted and lower intensity band edge emis-sion simultaneously exhibit a more pronounced luminescence from a broad defect-related band around 2 eV. Here, an upconverted near-infrared circularly polarized luminescence (UC-NIR Sep 27, 2011 · The photoenhancement effect of the band-edge photoluminescence in ZnO nanocrystals dispersed in ethanol is investigated by observing changes in optical properties after ultraviolet illumination. The two additional transitions Sep 1, 2009 · The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped-GaAs crystals at 77 K on the concentration of background acceptor impurities and the level of excitation in the range from 3×10 21 to 6×10 22 quantum/ (cm 2 s) are investigated. Dec 1, 2021 · In a great variety of ZnO materials (powders, crystals, ceramics) two types of luminescence bands are observed, namely, a narrow near UV band and a broad band in the visible spectral region. 09 eV (1. After simple deformation of the single crystals at room temperature, the band-edge luminescence showed a dramatic change, originating from stacking disorder, in the peak wavelength. The majority of the sample area emits the typical green emission. Nov 1, 1996 · We study the band edge luminescence of CdSe nanocrystallites to determine the origin of this emission. The near band edge (NBE) emission from ZnO excited by a 325 nm He-Cd laser was Mar 16, 2020 · On the other hand, halide perovskites exhibit a highly efficient band-edge PL attributable to the recombination of delocalized photocarriers. Recently a number of “dark exciton” theories have been proposed which explain the luminescence in terms of recombination through internal core Mar 28, 2024 · Typical luminescence origins in metal halides, including band-edge emission, STE emission, ion emission, and defect/impurity-related emission. Jan 1, 2019 · (a) X-ray excited optical luminescence spectra at room temperature for Cl-doped CuI, and (b) integral intensity and (c) peak wavelength of the near-band-edge emission as function of the Cl concentration. Aug 1, 2024 · In this work, we report experimental control of band-edge surface plasmons (SP) on holographic metal gratings, and have a study on influences of the bandgap and band-edge SPs on photoluminescence (PL) properties of colloidal quantum dots (cQDs) on the gratings that have not been investigated or elaborated in literatures on the subject [11, 20, 35]. Nov 14, 2007 · In recent years, intrinsic luminescence has been used as a method to characterize the recombination lifetime of crystalline silicon. Recently a number of “dark exciton” theories have been proposed which explain the luminescence in terms of recombination through internal core The yellow luminescence (YL) band with a maximum at 2. Feb 9, 2011 · The Burstein–Moss shift serves as a qualitative tool to analyze the widening of the optical band gap and to study the shape of the NBE luminescence in doped ZnO nanopowders. The photoluminescence (PL) spectra show that the near band edge luminescence of ZnO in the ultraviolet (UV) region is enhanced as the thickness of Ti increases up to 5 nm and, thereafter, it falls. Jun 15, 1997 · We study the luminescence of surface modified CdSe nanocrystallites. In addition, the possibility for the formation of band-tail states that are governed by the Rashba effect is under intense discussion [21,22]. Dec 3, 2020 · Because the holes self-trap, the band-edge luminescence is weak; hence, β-Ga 2 O 3 has not been regarded as a promising material for light emission. The suppression of deep level emission Sep 21, 2009 · The band-edge luminescence properties of 4 H -AlN under biaxial and uniaxial stress are studied using the first-principle method. A surface layer exhibiting strong yellow luminescence (YL) near 566 nm in the nanowires was revealed, compared to weak YL in the bulk. The Apr 24, 2025 · The findings highlight a novel strain-engineering strategy for optimizing band edge modulation and charge transport in 2D perovskites, providing valuable insights for the design of high-performance perovskite solar cells. The shift Feb 1, 2017 · The effect of Ag nanoparticles (NPs) on the optical properties of ZnO has been investigated. We use cookies to ensure the normal operation of our website, personalize content and advertisements, provide social media functions, and analyze how people use our website. The UV band is located near the fundamental absorption edge of ZnO, therefore it is called near-band-edge (NBE) luminescence. However, recent theory suggests that the band edge luminescence arises from an optically inactive fine structure state or "dark" exciton. The excited states are attributed to spin-orbit splitting of the valence band. Owen,1 David R. Especially in the case of defect related luminescences, the different points of view in the literature are outlined and May 31, 2017 · Giant Enhancement of Defect-Bound Exciton Luminescence and Suppression of Band-Edge Luminescence in Monolayer WSe2–Ag Plasmonic Hybrid Structures Alex D. The etch rate does not change with substrate temperatures between 10 and 50 °C. This double band emission in the range of exciton transitions has different interpretations [1]. Apr 1, 2021 · Singh et al. Feb 17, 2010 · The author observe sixfold enhancement in the near band gap emission of ZnO nanorods by employing surface plasmon of Au nanoparticles, while the defect-related Dec 8, 2021 · Here, the authors report the observation of deep-ultraviolet (DUV) electroluminescence and photocurrent generation in van der Waals heterostructures based on hBN crystals, showing potential for Dec 25, 2014 · The ultrafast luminescence component of CuI material is the band-edge emission, which is the B emission band in the spectra of CuI crystals. This emission peak of CuI crystal is not obvious at room temperature because of its low luminescence intensity. Figure 7. Reichman,1 and Louis E. They were pinched between aluminum plates and pressed with the tips of the first two fingers. Coaquira; Mar 11, 1991 · We report the first well-resolved band-edge luminescence from excitons confined in fully strained SiGe quantum wells grown on Si. . Therefore, the accurate determination of the intrinsic near-band-edge optical properties is essential for Dec 8, 2021 · Metallic nanostructures acting as optical nanoantennas can significantly enhance the photoluminescence (PL) of nearby emitters. Figure 6. The selective reabsorption of bound‐exciton emission is shown to give rise to artifactual luminescence peaks in the low‐energy portion of the band‐edge region that sometimes overwhelm emission from the bound‐exciton lines, resulting Jun 1, 2015 · Aiming to contribute to clarify the origin of this emission line, we report a study on the near band edge luminescence of ZnO microrods grown by laser assisted flow deposition (LAFD) that were Oct 24, 2006 · In order to realize the full potential of nanowires for optical applications, it is essential to synthesize nanowires that can emit predominantly via band to band or band edge (BE) transitions. We observed the PL emission bands from free and localized/bound excitons over the entire temperature range. 3 eV dominated the spectrum [15]. Oct 1, 2007 · Near band-edge luminescence and evidence of the weakening of the N-conduction-band coupling for partially relaxed and high nitrogen composition Ga As 1 − x N x epilayers J. Albeit luminescence enhancement factors of several orders of magnitude have been reported for quantum dots or molecules, in the case of bulk emitters, the magnitude of the plasmonic enhancement is strongly hindered by the weak spatial overlap between the active medium Within the band-edge resolvable temperature range (300–223 K), the near band-edge luminescence intensity also increased with decrease in the sample temperature along with a blue shift in the peak position. doi:10. The band-edge luminescence properties of 4H-AlN under biaxial and uniaxial stress are studied using the first-principle method. An eightfold enhancement of the near-band-edge (NBE) emission with suppression of deep levels has been achieved without insertion of a dielectric spacer. Free exciton transitions of AlGaN Dec 25, 2014 · Cuprous iodide (CuI) has attracted a great deal of attention [1], [2], [3] because of its unusual properties such as wide band gap, negative spin–orbit splitting [4], anomalous diamagnetism behavior [5], and large ionicity [6]. Recently a number of "dark exciton" theories have been proposed which explain the luminescence in terms of recombination through internal core states The band-edge property and built-in electric fields of two different AlxGa1−xN/GaN (AlGaN/GaN) heterostructures (HSs) with and without an additional AlGaN inserted layer were studied by thermoreflectance (TR), photoluminescence (PL), and contactless electroreflectance (CER) techniques. Brus1* Mar 1, 2022 · The near band edge luminescence and time-resolved transient photoluminescence were measured in bulk CsPbCl 3 single crystals. Although today Feb 1, 2017 · The effect of Ag nanoparticles (NPs) on the optical properties of ZnO has been investigated. Figure 3 shows the near -band edge PL spectrum obtained from undoped STO at 8 K. In contrast, other defect-related Jun 22, 2018 · The band edge emission is significantly increased as compared to blue-green emission after ZnS surface layer deposition on ZnO nanorods. H. Samples of pure and Ag doped ZnO were synthesized by the combustion method. As-mentioned above, the band-edge emission and STE emission are closely related to the structural dimensionalities of metal halides. We study the band edge luminescence of CdSe nanocrystallites to determine the origin of this emission. The wavelength range of the luminescence (shown by white dots) originating from stacking faults is 410-440 nm. This process is the reverse of photo-generation and is characterized by its dependence on the material's bandgap and the radiative recombination coefficient. Jun 1, 2020 · Recently, surface plasmons (SPs) assisted enhanced band-edge emission in ZnO nanostructures is demonstrated as an effective means to improve the luminescence quantum efficiency of ZnO NRs arrays architecture [[8], [9], [10]]. The value of this splitting is proportional to the deviation from sphericity and inversely proportional to the However, recent theory suggests that the band edge luminescence arises from an optically inactive fine structure state or “dark” exciton. The PL spectra characterize the band-edge luminescence property of GaN. This suggests that the luminescence involves a level above the conduction band edge. In equilibrium, excitons B and C have energies 92 and 14 meV lower than exciton A , respectively. Mar 25, 2021 · NEAR-BAND-EDGE LUMINESCENCE A. To address this issue we modify the surface of CdSe nanocrystallites with a variety of organic and inorganic ligands. Find the latest published documents for band edge luminescence, Related hot topics, top authors, the most cited documents, and related journals The full width at half maximum of the band-edge luminescence peak of Cl-doped CuI film is as small as 7 nm, showing extremely high luminescence monochromaticity. 95 % , the top valence band is the B exciton state. The pressed crystals dominantly showed band-edge luminescence Sep 14, 2015 · This is in marked contrast with the power dependence of the luminescence from single crystal ZnO reported previously 39, 41 and shown in Fig. This suggests the grain-specific emission to be related to local defects. Optical transitions have not been destroyed after etching, instead, two additional lower energy transitions appear close to the band-edge luminescence. When the uniaxial tensile strain exceeds ∼ 0. Jun 1, 2016 · This review gives the reader an overview of the published results describing near band-edge as well as defect related luminescence in aluminum nitride, also presenting findings from theoretical The spatial distribution of defect-related and band-edgeluminescence from GaN nanowires grown by metal-organic chemical vapor deposition was studied by spatially resolved cathodoluminescence imaging and spectroscopy. However, it is increasingly believed that these luminescent properties of perovskites, in particular CsPbBr3, are determined by the direct and indirect emission transitions [1, 2]. The resistivity in the wafer set ranges from 1 to 11,000 ohm-cm under constant excitation intensity. The observed dependences are explained by formation of the density tails of states as a result of Mar 28, 2024 · discuss the NIR luminescence origins, which are mainly attributed to band-edge transition, self-trapped exciton (STE) emission, ion emission, and defect/impurity- ABSTRACTThis paper quickly reviews the structure of band-edge luminescence in Si/strained Si1−xGex heterostructures, and then focusses on two recent developments -- the origin of “deep” sub-bandgap luminescence which is sometimes observed in structures grown by Molecular Beam Epitaxy (MBE) and the understanding of the temperature dependence of the band-edge luminescence (up to room The band edge luminescence of surface modified CdSe nanocrystallites: Probing the luminescing state. Jul 12, 2017 · Using low-temperature (7. Because of their large surface to volume ratios it has been suggested that the emission originates from surface-related states. Sep 12, 2021 · These observations have important consequences for the understanding of luminescence of 2D perovskites, for which peak splitting of the band edge emission is a common, yet not completely resolved observation. However, many compound semiconductor nanowires, irrespective of the method of their growth, contain a high density of native defects; these result in competing deep defect (DD) related emission Abstract In recent years, intrinsic luminescence has been used as a method to characterize the recombination lifetime of crystalline silicon. Mar 1, 2001 · The photoluminescence results indicate that the band-edge luminescence of CdSe QDs has been strongly enhanced and obviously stabilized after organic or inorganic surface passivation. At liquid-He temperatures the photoluminescence is due to shallow bound excitons, and in addition to a no-phonon line, phonon-assisted transitions involving TA phonons and Si-Si, Si-Ge, and Ge-Ge TO phonons are observed At higher temperatures the spectra are Nov 1, 2006 · We studied deformation effects on band-edge luminescence of pure hexagonal boron nitride single crystals. On the other hand, visible luminescence at 500 nm occurs only at the oxidation temperatures higher than 600 °C and Dec 5, 2005 · We show that the band edge luminescence of the implantation modified layer at room temperature is low compared to the luminescence from the substrate. There has been much speculation as to the origin of the band edge emission in these quantum confined structures. Feb 1, 2018 · In this Letter, the excitonic responses of single crystals are studied by one- and two-photon photoluminescence excitation (1- and 2-PLE) spectroscopy. [43] also reported that defect luminescence intensity saturates while band-edge luminescence intensity increases linearly with the increase in incident power. The assumption is that the steady-state intrinsic photoluminescence at 1. Apr 20, 2023 · Knowledge of excitonic states and band tail states is necessary for understanding recombination and transport in these materials. Dec 9, 2019 · Here, the band-edge exciton fine structure and in particular its exciton and biexciton dynamics in high quality crystals of (PEA) 2 PbI 4 are investigated. Abstract The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped GaAs crystals at 77К on the concentration of background acceptor impurities and the level of excitation in the range from 3 21 to 6 1022 quantum/(сm2 s) are investigated. It is found that the growth from high temperature (70 °C) precursor solution and succeeding surface passivation by MgO layer together lead to a five times enhancement of band-edge luminescence, in comparison to those grown by conventional low-temperature method without surface Luminescence band-edge Dependencies of luminescence bands (both fluorescence and phosphorescence), anisotropy of emission, and its lifetime on a frequency of excitation, when fluorescence is excited at the red edge of absorption spectrum. Jan 1, 2008 · In this work, we measured the band-edge photoluminescence (PL) intensities of a number of single-crystal wafers. Close-up of the defect region in 4H-SiC. With increasing temperature the decay rates of the two bands become comparable. However, recent theory suggests that the band edge luminescence arises from an Feb 17, 2020 · On the other hand, halide perovskites exhibit a highly efficient band-edge PL attributable to the recombination of delocalized photocarriers. Jan 16, 2024 · Within the band-edge resolvable temperature range (300–223 K), the near band-edge luminescence intensity also increased with decrease in the sample temperature along with a blue shift in the peak position. Figure 12: Temperature dependence of near band edge luminescence for 6H-SiC:N doped, n- type. Johnson , Fei Cheng , Yutsung Tsai , and Chih-Kang Shih * Sep 23, 2021 · In this work, we perform a sulfur chemical passivation on GaAs substrate, which leads to a change in the photoluminescence (PL) owing to a reduction of surface states. The measured 71 meV width of the peak is a result of temperature broadening convoluted with an instrument resolution, which is narrower than that of reported. Although the band-edge luminescence lifetimes were among the first optical properties of colloidal QDs to be investigated11–13 they received much less attention than the intraband relaxation – The near-band-edge properties of these perovskites are important, because they are related to the solar cell and luminescence efficiencies. CuI has three crystalline phases: α, β and γ [7], and normally exists in the low-temperature γ-phase with zinc blend structure. 5 shows the fluorescence spectra at different excitations for the solutes with the 0-0 transitions close to vI vn, and vra frequencies Self‐absorption is shown to dramatically distort both the intensity and spectral distribution of low‐temperature band‐edge photoluminescence in InP. However, it remains a big challenge for real application, limited by their small luminescence dissymmetry factor or low emission intensity. Oct 1, 2016 · This review gives the reader an overview of the published results describing near band-edge as well as defect related luminescence in aluminum nitride, also presenting findings from theoretical reports investigating band-structure, intrinsic defects or foreign impurities. Region shown by the red square in Figure 6. yb ogdtqq er 5iy5 rw4bf anxbhxyv imgp ezlcyww kbni vipvl59o